BTC $83,466.89 -1.31%
ETH $2,678.55 -0.35%
BNB $764.60 -1.65%
XRP $1.49 -2.45%
SOL $118.86 -3.25%
TRX $0.3357 +0.60%
DOGE $0.0940 -3.05%
ADA $0.2457 -3.73%
BCH $308.57 -7.54%
LINK $15.28 +8.73%
HYPE $88.06 -4.06%
AAVE $148.01 -4.25%
SUI $1.14 -8.72%
XLM $0.2287 +5.74%
ZEC $1,471.38 -8.46%
AAPL $338.48 -0.54%
AMZN $246.58 -1.44%
GOOGL $342.76 -0.39%
MSFT $509.94 -1.44%
META $715.18 -4.72%
NVDA $228.75 +1.49%
TSLA $357.44 -4.33%
SNDK $1,710.73 -4.13%
INTC $115.97 -7.81%
SPCX $145.65 -2.13%
MU $1,053.43 -3.84%
AMD $608.74 -4.07%
BTC $83,466.89 -1.31%
ETH $2,678.55 -0.35%
BNB $764.60 -1.65%
XRP $1.49 -2.45%
SOL $118.86 -3.25%
TRX $0.3357 +0.60%
DOGE $0.0940 -3.05%
ADA $0.2457 -3.73%
BCH $308.57 -7.54%
LINK $15.28 +8.73%
HYPE $88.06 -4.06%
AAVE $148.01 -4.25%
SUI $1.14 -8.72%
XLM $0.2287 +5.74%
ZEC $1,471.38 -8.46%
AAPL $338.48 -0.54%
AMZN $246.58 -1.44%
GOOGL $342.76 -0.39%
MSFT $509.94 -1.44%
META $715.18 -4.72%
NVDA $228.75 +1.49%
TSLA $357.44 -4.33%
SNDK $1,710.73 -4.13%
INTC $115.97 -7.81%
SPCX $145.65 -2.13%
MU $1,053.43 -3.84%
AMD $608.74 -4.07%

tron

TRON is committed to accelerating the decentralization of the internet through blockchain technology and decentralized applications (DAPP).
All
Article
Flash

first_img Samsung Electronics accelerates the construction of the first mass production line in Pyeongtaek P5, with the equipment introduction target moved up to the second quarter of next year

According to a report by ZDNet Korea on September 28, Samsung Electronics is accelerating the construction of the first mass production line (Ph1) at the Pyeongtaek Fifth Campus (P5) and is discussing with major equipment manufacturers to move the target for Ph1 equipment installation from the originally planned third quarter of next year to the second quarter of next year. P5 is the next-generation semiconductor production base aimed to be operational by 2028, and the construction of the Ph1 cleanroom began in the third quarter of this year.Samsung Electronics had previously advanced the completion of the P5 Ph1 cleanroom, originally scheduled for early next year, by about six months, so the equipment installation is expected around the third quarter of next year. Industry insiders say that the start time for equipment installation is planned to be moved up from July to August next year to around May to June next year; others have indicated that Samsung has even proposed to deliver equipment in the first quarter of next year for temporary storage at other locations, showing a strong willingness to invest early.Discussions on the investment for the second phase of P5 (Ph2) are also progressing. Currently, Ph1 is more likely to be built as a DRAM and HBM production line, while Ph2 is more likely to be built as an advanced NAND production line, including the tenth generation (V10). Equipment industry insiders say that formal purchase orders have not yet been placed, but Samsung has discussed building Ph2 as a NAND production line with partners, and due to the long equipment delivery cycle, they are requesting to prepare relevant components in advance. Reports indicate that large global tech companies are increasing orders for high-performance DRAM and NAND for AI infrastructure, while storage companies like Samsung have limited production capacity. Samsung stated during the second quarter earnings call in July that unmet demand this year will extend into next year, and the supply shortage next year will be more severe than this year, with shortages expected to continue until 2028.

Cosmos Hub: 1.227 million ATOM has been recovered from the Neutron attack case, with funds temporarily stored at a 4/6 multi-signature address

Cosmos Labs disclosed that on September 22, Neutron encountered a governance attack that led to the theft of liquidity from protocols such as Astroport, with approximately 1.73 million ATOM subsequently transferred by the attacker to Cosmos Hub. The Cosmos Hub itself was not attacked, and user funds were not affected. To prevent the stolen ATOM from being transferred out, Hub validators temporarily paused the network for about 24.5 hours and resumed block production on September 23 based on the patched Gaia v28.3.0.Cosmos Labs stated that during the pause, 1.227 million ATOM remained in the attacker's Hub address. When the network was restored, these were transferred to a 4/6 multi-signature address composed of Nansen, Keplr, Enigma, Silknodes, Kiln, and Polkachu through a one-time change. Previously, about 500,000 ATOM had been exchanged for ETH via THORChain and could not be recovered; another 169,000 ATOM entered the attacker's address after the network was restored due to THORChain refunds and were sold after being transferred to Osmosis. The current multi-signature address holds approximately 1.227 million ATOM, which can only be returned after authorization from a Cosmos Hub governance proposal. The related funds will not be staked, lent, or traded. The Neutron team expects to submit a recovery plan and related governance proposals next week.

first_img Samsung Electronics adjusts the next-generation DRAM roadmap, naming B1b as D0a

According to a report by ZDNet Korea, Samsung Electronics is adjusting its next-generation DRAM strategy by incorporating the previously project-based B1b into its official roadmap, naming it the first DRAM D0a below 10 nanometers. Previously, D0a referred to vertical transistor DRAM, and this product is now classified separately as D0a-V. This renaming aims to accelerate the introduction of advanced packaging in general DRAM.B1b will manufacture storage cells and peripheral driver circuits on different wafers before bonding them together, using wafer-to-wafer hybrid bonding and directly connecting through copper interconnects. The currently commercialized DRAM is 1c, which is the 6th generation 10 nanometer level, with a line width of about 11 to 12 nanometers; the next generation 1d is the 7th generation 10 nanometer level, with a line width of about 10 to 11 nanometers, considered effectively the last 10 nanometer level product, with the related line width being a marketing term rather than an actual physical size. Vertical transistors can arrange transistors within the cell vertically, reducing the cell area from 6F² to 4F², but they need to address high aspect ratio etching and leakage current, making development more challenging. Wafer-to-wafer hybrid bonding has already been mass-produced in CMOS image sensors and high-stacking NAND.Samsung Electronics is evaluating the use of B1b for the 8th generation high bandwidth memory HBM5. HBM5 is expected to be mass-produced around 2029, aiming to increase operating speed by more than 50% compared to HBM4E. Industry estimates suggest that D0a DRAM based on B1b will be commercially available in about two years, with specific mass production investment schedules likely to be determined by mid-next year.

first_img Samsung Electronics plans to expand production of 4-nanometer to meet HBM4 demand

According to Money Today on September 21, Samsung Electronics is advancing the expansion of advanced process capacity in wafer foundry due to the growth of the HBM market. To meet the rising demand for HBM4 base chips, it is evaluating the expansion of its 4-nanometer process. Samsung's HBM4 consists of 10-nanometer 6th generation (1c) DRAM core chips and 4-nanometer logic base chips, with the base chips responsible for high-speed data exchange with AI accelerators such as GPUs.Unlike SK Hynix, which uses TSMC's 12-nanometer process for HBM4 base chips, Samsung employs its own 4-nanometer process. This production line is operating at full capacity and has taken on orders from companies like Nvidia and Groq for 3 LPU, and the company has recently raised its prices for new 4-nanometer orders and HBM4 base chips. Samsung expects HBM4 revenue in the third quarter to increase more than threefold quarter-on-quarter, with HBM4 accounting for significantly more than 60% of HBM revenue in the second half of the year. The additional expansion at P4 in Pyeongtaek will mostly be used for 1c DRAM for HBM, with more than half of the wafer foundry's 4-nanometer capacity allocated to HBM4 base chips.HBM4E also uses 4-nanometer base chips, and Samsung provided samples to customers in May. The company is also evaluating the construction of a new 2-nanometer production line for HBM5, aiming for a GAA structure 2-nanometer process and increasing TSV density to improve operating speed by more than 50% compared to HBM4E. Samsung started the first generation of 2-nanometer mass production in the second half of last year and is advancing the second generation of products in the second half of this year. Citigroup expects global HBM bit demand to reach 75.2 billion Gb next year, a year-on-year increase of 62%, with supply around 59.4 billion Gb and a gap of about 21%.
app_icon
ChainCatcher Building the Web3 world with innovations.