Samsung Electronics executive: It is expected that HBM will account for nearly 30% of DRAM wafer production capacity next year

According to a report by the Financial Associated Press citing local media on September 29, Samsung Electronics Executive Vice President Kim Taewoo stated that HBM is expected to account for nearly 30% of the total wafer capacity of DRAM manufacturers next year, up from the current ratio of about 20%. He mentioned that HBM competes with traditional DRAM for the same batch of wafer capacity, and increasing HBM output may squeeze the supply of traditional DRAM.

TrendForce previously predicted that by the end of 2027, the HBM wafer input from the three major global HBM suppliers will account for about 30% of the total DRAM wafer input, but in terms of storage capacity, it will only contribute about 13% of the total DRAM supply. Additionally, according to media reports on September 20, Samsung began mass production and shipment of HBM4 in February this year and provided 12-layer HBM4E samples to customers including NVIDIA in May; the industry expects Samsung's monthly wafer input for HBM to increase from about 180,000 wafers this year to about 250,000 wafers next year.

On the same day, TrendForce stated that the demand for AI servers continues, and HBM and general DRAM will still share limited advanced process capacity. The storage supply will remain tight in 2027, and the price expectations for HBM in 2027 have been raised, with an expected year-on-year increase of 121% in the mixed average selling price. Due to limited supply and rising system costs, 8-layer HBM is expected to become a priority evaluation option for several manufacturers in 2027, with its price per Gb expected to be about 10% to 20% higher than that of 12-layer products.