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first_img Samsung Electronics accelerates the construction of the first mass production line in Pyeongtaek P5, with the equipment introduction target moved up to the second quarter of next year

According to a report by ZDNet Korea on September 28, Samsung Electronics is accelerating the construction of the first mass production line (Ph1) at the Pyeongtaek Fifth Campus (P5) and is discussing with major equipment manufacturers to move the target for Ph1 equipment installation from the originally planned third quarter of next year to the second quarter of next year. P5 is the next-generation semiconductor production base aimed to be operational by 2028, and the construction of the Ph1 cleanroom began in the third quarter of this year.Samsung Electronics had previously advanced the completion of the P5 Ph1 cleanroom, originally scheduled for early next year, by about six months, so the equipment installation is expected around the third quarter of next year. Industry insiders say that the start time for equipment installation is planned to be moved up from July to August next year to around May to June next year; others have indicated that Samsung has even proposed to deliver equipment in the first quarter of next year for temporary storage at other locations, showing a strong willingness to invest early.Discussions on the investment for the second phase of P5 (Ph2) are also progressing. Currently, Ph1 is more likely to be built as a DRAM and HBM production line, while Ph2 is more likely to be built as an advanced NAND production line, including the tenth generation (V10). Equipment industry insiders say that formal purchase orders have not yet been placed, but Samsung has discussed building Ph2 as a NAND production line with partners, and due to the long equipment delivery cycle, they are requesting to prepare relevant components in advance. Reports indicate that large global tech companies are increasing orders for high-performance DRAM and NAND for AI infrastructure, while storage companies like Samsung have limited production capacity. Samsung stated during the second quarter earnings call in July that unmet demand this year will extend into next year, and the supply shortage next year will be more severe than this year, with shortages expected to continue until 2028.

first_img Samsung Electronics adjusts the next-generation DRAM roadmap, naming B1b as D0a

According to a report by ZDNet Korea, Samsung Electronics is adjusting its next-generation DRAM strategy by incorporating the previously project-based B1b into its official roadmap, naming it the first DRAM D0a below 10 nanometers. Previously, D0a referred to vertical transistor DRAM, and this product is now classified separately as D0a-V. This renaming aims to accelerate the introduction of advanced packaging in general DRAM.B1b will manufacture storage cells and peripheral driver circuits on different wafers before bonding them together, using wafer-to-wafer hybrid bonding and directly connecting through copper interconnects. The currently commercialized DRAM is 1c, which is the 6th generation 10 nanometer level, with a line width of about 11 to 12 nanometers; the next generation 1d is the 7th generation 10 nanometer level, with a line width of about 10 to 11 nanometers, considered effectively the last 10 nanometer level product, with the related line width being a marketing term rather than an actual physical size. Vertical transistors can arrange transistors within the cell vertically, reducing the cell area from 6F² to 4F², but they need to address high aspect ratio etching and leakage current, making development more challenging. Wafer-to-wafer hybrid bonding has already been mass-produced in CMOS image sensors and high-stacking NAND.Samsung Electronics is evaluating the use of B1b for the 8th generation high bandwidth memory HBM5. HBM5 is expected to be mass-produced around 2029, aiming to increase operating speed by more than 50% compared to HBM4E. Industry estimates suggest that D0a DRAM based on B1b will be commercially available in about two years, with specific mass production investment schedules likely to be determined by mid-next year.

first_img Samsung Electronics plans to expand production of 4-nanometer to meet HBM4 demand

According to Money Today on September 21, Samsung Electronics is advancing the expansion of advanced process capacity in wafer foundry due to the growth of the HBM market. To meet the rising demand for HBM4 base chips, it is evaluating the expansion of its 4-nanometer process. Samsung's HBM4 consists of 10-nanometer 6th generation (1c) DRAM core chips and 4-nanometer logic base chips, with the base chips responsible for high-speed data exchange with AI accelerators such as GPUs.Unlike SK Hynix, which uses TSMC's 12-nanometer process for HBM4 base chips, Samsung employs its own 4-nanometer process. This production line is operating at full capacity and has taken on orders from companies like Nvidia and Groq for 3 LPU, and the company has recently raised its prices for new 4-nanometer orders and HBM4 base chips. Samsung expects HBM4 revenue in the third quarter to increase more than threefold quarter-on-quarter, with HBM4 accounting for significantly more than 60% of HBM revenue in the second half of the year. The additional expansion at P4 in Pyeongtaek will mostly be used for 1c DRAM for HBM, with more than half of the wafer foundry's 4-nanometer capacity allocated to HBM4 base chips.HBM4E also uses 4-nanometer base chips, and Samsung provided samples to customers in May. The company is also evaluating the construction of a new 2-nanometer production line for HBM5, aiming for a GAA structure 2-nanometer process and increasing TSV density to improve operating speed by more than 50% compared to HBM4E. Samsung started the first generation of 2-nanometer mass production in the second half of last year and is advancing the second generation of products in the second half of this year. Citigroup expects global HBM bit demand to reach 75.2 billion Gb next year, a year-on-year increase of 62%, with supply around 59.4 billion Gb and a gap of about 21%.

first_img Samsung Electronics and SK Hynix have successively hired former international finance officials from the Ministry of Finance and Economy

Samsung Electronics hired former Director of the Foreign Exchange System Division of the Ministry of Finance and Economy, Lee Hee-kun, for its IR team as an executive last month. Lee Hee-kun has held positions such as Director of the Foreign Exchange System Division and Director of the Capital Market Policy Division, responsible for foreign exchange systems and overseas investment responses. In April this year, he participated in the work of including South Korea in the World Government Bond Index and received special recognition. He is expected to be responsible for responding to overseas investors and the global capital market.SK Hynix hired former Director of the Strategic Economic Division of the Ministry of Finance and Economy, Jeong Yu-jin, as the Vice President under the Communications Division last month. Jeong Yu-jin has served as the Director of the Climate and Environment Budget Division, Secretary to the Deputy Prime Minister for Economic Affairs, Director of the Foreign Exchange System Division, and Director of the Foreign Exchange Fund Division. Both companies are advancing production investments in the United States, with Samsung Electronics planning to invest $37 billion to build a foundry in Taylor, Texas, and SK Hynix planning to invest $4 billion to build an advanced packaging factory in Indiana.

first_img Samsung Electronics and SK Hynix raise third-quarter operating profit expectations

According to the Chosun Ilbo report on September 15, Samsung Electronics and SK Hynix's third-quarter operating profit consensus has been raised again within three months. Based on reports from major brokerages and overseas investment banks, Samsung Electronics' estimated operating profit for the third quarter is approximately 114 trillion won, an increase of 12.2836 trillion won (12%) from 101.9052 trillion won three months ago, and a 28% increase from 89.4 trillion won in the second quarter. SK Hynix's estimate for the third quarter is 78.8035 trillion won, a 4% increase from 75.7249 trillion won three months ago, and a 30% increase from 60.5426 trillion won in the second quarter.TrendForce expects the fixed transaction prices for general DRAM in the third quarter to rise by 13% to 18% quarter-on-quarter, while NAND flash is expected to rise by 10% to 15%. The securities industry is paying attention to Samsung Electronics' HBM4 revenue share, which expanded from 5% in the first quarter to about 35% in the second quarter, along with improvements in yield rates. SK Hynix maintains the largest market share in HBM, but improvements in Samsung's HBM4 mass production may dilute its supply premium. Citigroup Securities has lowered SK Hynix's third-quarter operating profit estimate from 76.7 trillion won to 74 trillion won due to the strengthening of the won. Micron will announce its fourth-quarter results for fiscal year 2026 (June to August) on the 30th, with revenue guidance of $49 billion to $51 billion.
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