Yangtze Memory Technologies will begin trial production of LPDDR5 by the end of 2026, and Changxin intends to enter the NAND market

The global memory market continues to face severe shortages, with AI and cloud applications driving demand and prices for DRAM and NAND Flash. China's two major memory manufacturers, Yangtze Memory Technologies and Changxin Memory Technologies, are set to break the current duopoly.

Yangtze Memory Technologies will begin trial production of LPDDR5 DRAM by the end of 2026, while Changxin Memory Technologies aims to transition from DRAM to NAND Flash. Industry speculation suggests that the two companies may face off as early as 2028. Yangtze Memory Technologies has completed the development of 294-layer 3D NAND using Xtacking technology, and Samsung will enter into a patent licensing agreement with them in 2025, starting with the 10th generation V-NAND.

Yangtze Memory Technologies' phase three plan is set to commence production by the end of 2026, with an initial capacity of approximately 25,000 wafers of DRAM, ramping up in 2027, targeting LPDDR5, and planning for subsequent expansions as well as HBM and 3D DRAM. Changxin is reported to be setting up a NAND research and production line in Beijing, with mass production expected as early as 2028 to 2029.